Advancements in Materials, Vol. 2, Issue 1, Feb  2018, Pages 17-28; DOI: 10.31058/j.am.2018.21002 10.31058/j.am.2018.21002

Absorption Coefficient of Bi22.5Se0.5 Structures Applicable to the Creation of Photoelectric Converters

Advancements in Materials, Vol. 2, Issue 1, Feb  2018, Pages 17-28.

DOI: 10.31058/j.am.2018.21002

Nuru Safarov 1* , Sevinc Orucova 2 , Gurban Ahmadov 3 , Shahla Ahmadova 3

1 Department of Electronics and Telecommunications Engineering, Khazar University, Baku, Azerbaijan

2 Azerbaijan Medical University, Baku, Azerbaijan

3 Institute of Physics of Azerbaijan Nas, Baku, Azerbaijan

Received: 12 December 2017; Accepted: 8 January 2018; Published: 14 February 2018

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Abstract

The dependences of the light absorption coefficient in the film structures Bi22.5Se0.5 on the photon energy have been experimentally studied. It is shown that the profiles of the distribution of selenium atoms over the thickness of the surface layer of unannealed and depleted thin Bi22.5Se0.5 films. It is also shown that the release of selenium during heat treatment is due to the relatively high vapor pressure of selenium in a three-component semiconductor compound. As a result of work are received Si -Bi2Те3-хSeх heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that the structures Bi22.5Se0.5 received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.

Keywords

Thin-Film Material, Semiconductor, Optical Properties, Crystal, Absorption Coefficient, Concentration

Copyright

© 2017 by the authors. Licensee International Technology and Science Press Limited. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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